2SC5539 Datasheet and Replacement

Ordering number:ENN6341NPN Epitaxial Planar Silicon Transistor2SC5539VHF to UHFLow-Noise Wide-Band Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2159 High cutoff frequency : fT=7.5GHz typ.[2SC5539] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.

Ordering number:ENN6291NPN Epitaxial Planar Silicon Transistor2SC5538VHF to UHF OSC,High-Frequency Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =10.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2159 Ultrasmall, slim flat-lead package.[2SC5538](1.4mm 0.8mm 0.6mm)1.40.10.2531 20.450.21 : Base2

Ordering number : ENA1092 2SC5536ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF Low-Noise Amplifier,2SC5536AOSC ApplicationsFeatures Low-noise : NF=1.8dB typ (f=150MHz). High gain : S21e2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen free compliance.SpecificationsAbsolute Maximum Ra

Ordering number:ENN6340NPN Epitaxial Planar Silicon Transistor2SC5537Low-Voltage, Low-CurrentHigh-frequency Amplifier ApplicationsFeatures Package Dimensions Low voltage, low current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2159: NF=2.6dB typ (f=1GHz).[2SC5537] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)

Ordering number:ENN6290NPN Epitaxial Planar Silicon Transistor2SC5536VHF Low-Noise Amplifier , OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.8dB typ (f=150MHz).unit:mm2 High gain : S21e =16dB typ (f=150MHz).2159 Ultrasmall, slim flat-lead package.[2SC5536](1.4mm 0.8mm 0.6mm)1.40.10.2531 20.450.21 : Base2 : Emitter3 :

Ordering number:ENN6258NPN Epitaxial Planar Silicon Transistor2SC5534UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=2GHz).unit:mm2 High gain : S21e =10dB typ (f=2GHz).2161 High cutoff frequency : fT=13GHz typ.[2SC5534]0.65 0.650.150.34 30 to 0.11 20.60.65 0.52.01 : Emitter2 :

2SC5532TransistorsHigh-voltage Switching Transistor(400V, 5A)2SC5532 Features1) Low VCE(sat). (Typ. 0.6V at IC / IB = 5/1A)2) High switching speed. (tf : Max. 1s at Ic =4A)3) Wide SOA (safe operating area). Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 400 VCollector-emitter voltage VCEO 400 VEmitter-base voltage VEBO 7

2SC5531TransistorsHigh-Voltage Switching Transistor(400V, 2A)2SC5531 Features External dimensions (Units : mm)1) Low VCE(sat). VCE(sat)=0.15V (Typ.)13.1 (IC / IB =1A / 0.2A)3.22) High breakdown voltage.VCEO=400V3) Fast switching.8.8 tf 1.0s( ) 1 Base( ) 2 Collector (IC=0.8A)( ) 3 Emitter0.5Min.ROHM : PSD3EIAJ : SC-83A StructureThree-lay

Ordering number : ENA1092A2SC5536ARF Transistorhttp://onsemi.com12V, 50mA, fT=1.7GHz, NPN Single SSFPFeatures Low-noise : NF=1.8dB typ (f=150MHz) High gain S21e =16dB typ (f=150MHz) : 2 Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings