2SC5543 Datasheet. Specs and Replacement
Type Designator: 2SC5543 📄📄
SMD Transistor Code: YA-
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5500 MHz
Collector Capacitance (Cc): 0.51 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: MFPAK
- BJT ⓘ Cross-Reference Search
2SC5543 datasheet
..1. Size:46K hitachi
2sc5543.pdf 
2SC5543 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-690 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YA- . 2SC5543 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas... See More ⇒
8.1. Size:230K toshiba
2sc5548.pdf
2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage V = 370 V CEO High DC current gain h = 60 (min) (I = 0.2 A) FE C Maximum Ra... See More ⇒
8.3. Size:230K toshiba
2sc5548a.pdf
2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage V = 400 V CEO High DC current gain h = 40 (min) (I = 0.2 A) FE C Maximum ... See More ⇒
8.4. Size:44K sanyo
2sc5541.pdf
Ordering number ENN6337 NPN Epitaxial Planar Silicon Transistor 2SC5541 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=2GHz). unit mm 2 High gain S21e =10dB typ (f=2GHz). 2159 High cutoff frequency fT=13GHz typ. [2SC5541] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.1 0.25 ... See More ⇒
8.5. Size:30K sanyo
2sc5540.pdf
Ordering number ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions High cutoff frequency fT=10GHz typ. unit mm 2 High gain S21e =13dB typ (f=1GHz). 2159 Low noise NF=1.3dB typ (f=1GHz). [2SC5540] Small Cob Cob=0.4pF typ. Ultrasmall, slim flat-lead package. 1.... See More ⇒
8.6. Size:37K panasonic
2sc5546.pdf
Power Transistors 2SC5546 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.1 0.1 0.7 0.1 Absolute Maximum ... See More ⇒
8.7. Size:45K hitachi
2sc5545.pdf
2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 (Z) 1st. Edition Jan. 1999 Features Excellent inter modulation characteristic High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter Note Marking is ZS- . 2SC5545 Absolute Maximum Ratings (Ta = 25 ... See More ⇒
8.8. Size:46K hitachi
2sc5544.pdf
2SC5544 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-691 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YZ- . 2SC5544 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas... See More ⇒
8.9. Size:1157K kexin
2sc5548a.pdf
SMD Type Transistors NPN Transistors 2SC5548A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High speed switching High collector breakdown voltage High DC current gain 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Sym... See More ⇒
8.10. Size:201K inchange semiconductor
2sc5548.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5548 DESCRIPTION Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB1204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current swi... See More ⇒
8.11. Size:190K inchange semiconductor
2sc5548a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5548A DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB1204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and... See More ⇒
Detailed specifications: 2SC5519, 2SC5534, 2SC5536, 2SC5537, 2SC5538, 2SC5539, 2SC5540, 2SC5541, MPSA42, 2SC5544, 2SC5545, 2SC5546, 2SC5551, 2SC5552, 2SC5553, 2SC5554, 2SC5555
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