2SC5556 Datasheet PDF and Equivalents Search

 ..1. Size:65K  panasonic

 2sc5556.pdf

Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low noise figure NF High transition frequency fT Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine packing (0.95) (0.95) 1.9 0.1 2.90+0.20 ... See More ⇒

 8.1. Size:208K  toshiba

 2sc5550.pdf

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 8.2. Size:43K  sanyo

 2sc5551.pdf

Ordering number ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions High fT (fT=3.5GHz typ). unit mm Large current (IC=300mA). 2038A Large allowable collector dissipation (1.3W max). [2SC5551] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector 3 Emitter SA... See More ⇒

 8.3. Size:287K  sanyo

 2sc5551a.pdf

Ordering number ENA1118 2SC5551A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output 2SC5551A Amplifier Applications Features High fT (fT=3.5GHz typ). Large current (IC=300mA). Large allowable collector dissipation (1.3W max). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Un... See More ⇒

 8.4. Size:185K  onsemi

 2sc5551ae 2sc5551af.pdf

Ordering number ENA1118A 2SC5551A RF Transistor http //onsemi.com 30V, 300mA, fT=3.5GHz, NPN Single PCP Features High fT (fT=3.5GHz typ) Large current (IC=300mA) Large allowable collector dissipation (1.3W max) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Volta... See More ⇒

 8.5. Size:55K  panasonic

 2sc5553.pdf

Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.1 0.1 0.7 0.1 Absolute Maximum ... See More ⇒

 8.6. Size:46K  panasonic

 2sc5552.pdf

Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.1 0.1 0.7 0.1 Absolute Maximum ... See More ⇒

 8.7. Size:49K  hitachi

 2sc5554.pdf

2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 (Z) 1st. Edition Oct. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YH- . 2SC5554 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base... See More ⇒

 8.8. Size:46K  hitachi

 2sc5555.pdf

2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is ZD- . 2SC5555 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas... See More ⇒

 8.9. Size:187K  inchange semiconductor

 2sc5552.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5552 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒