2SC5597 Datasheet. Specs and Replacement

Type Designator: 2SC5597  📄📄 

SMD Transistor Code: C5597

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 1700 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 22 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

Package: TOP-3L

 2SC5597 Substitution

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2SC5597 datasheet

 ..1. Size:54K  panasonic

2sc5597.pdf pdf_icon

2SC5597

Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 20.0 0.5 5.0 0.3 (3.0) 3.3 0.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 Absolute Maximum Ra... See More ⇒

 8.1. Size:297K  toshiba

2sc5590.pdf pdf_icon

2SC5597

2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACT... See More ⇒

 8.2. Size:63K  renesas

2sc5593.pdf pdf_icon

2SC5597

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒

 8.3. Size:101K  nec

2sc5599.pdf pdf_icon

2SC5597

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin ultra super minimold package(t = 0.75 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5599 50 pcs (Non reel) 8 mm wide embossed ... See More ⇒

Detailed specifications: 2SC5587, 2SC5588, 2SC5589, 2SC5590, 2SC5591, 2SC5592, 2SC5593, 2SC5594, 2N3055, 2SC5606, 2SC5607, 2SC5609, 2SC5612, 2SC5619, 2SC5620, 2SC5622, 2SC5623

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