2SC5632 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5632
SMD Transistor Code: 2R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-70
2SC5632 Transistor Equivalent Substitute - Cross-Reference Search
2SC5632 Datasheet (PDF)
2sc5632.pdf
Transistors2SC5632Silicon NPN epitaxial planar typeFor high-frequency amplification and switchingUnit: mm0.15+0.100.3+0.10.050.0 Features3 High transition frequency fT S-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing1 2(0.65) (0.65)1.30.12.00.2 Absolute Maximum Ratings Ta = 25C
2sc5637.pdf
Ordering number:ENN6465NPN Triple Diffused Planar Silicon Transistor2SC5637Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5637] Adoption of MBIT process.3.4 5.616.03.12.82.0 2
2sc5638.pdf
Ordering number:ENN6466NPN Triple Diffused Planar Silicon Transistor2SC5638Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5638] Adoption of MBIT process.3.4 5.616.03.12.82.0 2
2sc5639.pdf
Ordering number:ENN6467NPN Triple Diffused Planar Silicon Transistor2SC5639Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5639] Adoption of MBIT process.3.4 5.616.03.12.82.0 2
2sc5631.pdf
2SC5631Silicon NPN EpitaxialUHF / VHF Wide Band AmplifierADE-208-981A (Z)2nd. EditionMar. 2001Features High gain bandwidth productfT = 11 GHz typ. High power gain and low noise figure ;PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHzOutlineUPAK12341. Base2. Collector3. Emitter4. CollectorNote: Marking is JR.2SC5631Absolute Maximum Rati
2sc5633.pdf
SMALL-SIGNAL TRANSISTOR 2SC5633 FOR HIGH FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit 2SC5633 is a super mini package resin sealed 4.6 MAXsilicon NPN epitaxial transistor, 1.51.6It is designed for high voltage application. CE B0.53 FEATURE 0.4MAXLow collector to emitter saturation voltage. 0.48
l2sc5635lt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635LT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)S-L2SC5635LT1G2.High gain,low noise3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.4.S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control Change Requirements;
l2sc5635wt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635WT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)2.High gain,low noise S-L2SC5635WT1G3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
