2SC5757 Datasheet and Replacement

2SC5757Silicon NPN EpitaxialVHF/UHF wide band amplifierADE-208-1396D (Z)Rev.4Jul. 2001Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is WE.2SC5757Absolute Maximum Ratings(Ta = 25 C)Item Symbol Ratings UnitCollector to base voltage VCBO 10 VCollector to emitter voltage

2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) fMaximum Ratings (Ta == 25C) ==Char

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

DATA SHEETNPN SILICON RF TRANSISTOR2SC5751NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (30 mW)FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

DATA SHEETNPN SILICON RF TRANSISTOR2SC5754NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)FEATURES Ideal for 460 MHz to 2.4 GHz medium output power amplification PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm High collector efficiency: C = 60% UHS0-HV technology (fT = 25 GHz

DATA SHEETNPN SILICON RF TRANSISTOR2SC5753NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (60 mW)FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

DATA SHEETNPN SILICON RF TRANSISTOR2SC5752NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (60 mW)4-PIN SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

DATA SHEETNPN SILICON RF TRANSISTOR2SC5750NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (30 mW)4-PIN SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

2SC5759Silicon NPN EpitaxialUHF / VHF wide band amplifierADE-208-1389 (Z)Preliminary 1st. EditionMar. 2001Features High gain bandwidth productfT = 10.6 GHz typ. High power gain and low noise figure ;PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz Very low distortionOutput IP3 (800 MHz) = 36 dBm typ.OutlineCMPAK-423141. Collector2. Collector3.