2SC5827 Datasheet, Equivalent, Cross Reference Search

2SC5827Silicon NPN EpitaxialVHF/UHF wide band amplifierADE2081464(Z)Rev.0Nov. 2001Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is WW.2SC5827Absolute Maximum Ratings(Ta = 25 C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter volta

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC5824DatasheetNPN 3.0A 60V Middle Power TransistorOutline MPT3Parameter ValueVCEO60BaseIC3A CollectorEmitter2SC5824Features(SC-62)1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SA20713) Low VCE(sat)VCE(sat)=0.50V(Max.)(IC/IB=2A/200mA)4) Lead Free/RoHS Compliant.Inner circuitCollectorApplicationsMotor drive

2SC5825 Transistors Power transistor (60V, 3A) 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. CPT3(Tf : Typ. : 30ns at IC = 3A) (SC-63)2) Low saturation voltage, typically :(Typ. 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2073 (1) Base(2) Collector Applica

2SC5826 Transistors Power transistor (60V, 3A) 2SC5826 External dimensions (Unit : mm) Features 1) High speed switching. ATV 2.56.8(Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically :(Typ. 200mV at IC = 2A, IB = 0.2mA) 0.65Max.3) Strong discharge power for inductive load and 0.5capacitance load. (1) (2) (3)(1) Emitter2.54 2.544) Compleme

Transistors2SC5829Silicon NPN epitaxial planar typeFor high speed switching Unit: mm Features3 2 Allowing the small current and low voltage operation High transition frequency fT1 Suitable for high-density mounting and downsizing of the equip-0.39+0.011.000.05 -0.03ment for Ultraminiature leadless package0.6 mm 1.0 mm (height 0.39 mm)0.250.05 0.25

SMD Type TransistorsNPN Transistors2SC5824SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=60V High-speed switching.0.42 0.10.46 0.1 Low saturation voltage Complements the 2SA20711.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Bas