2SC5831 Datasheet. Specs and Replacement
Type Designator: 2SC5831 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO-126ML
2SC5831 Substitution
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2SC5831 datasheet
Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip- 1 ment for Ultraminiature leadless package 0.39+0.01 1.00 0.05 -0.03 0.6 mm 1.0 mm (height 0.39 mm) 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings ... See More ⇒
Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit mm Features 3 2 Suitable for high-density mounting and downsizing of the equip- ment for Ultraminiature leadless package 1 0.6 mm 1.0 mm (height 0.39 mm) 0.39+0.01 1.00 0.05 -0.03 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit ... See More ⇒
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Detailed specifications: 2SC5809, 2SC5812, 2SC5813, 2SC5820, 2SC5826, 2SC5827, 2SC5828, 2SC5829, D965, 2SC5838, 2SC5839, 2SC5840, 2SC5841, 2SC5845, 2SC5846, 2SC5849, 2SC5850
Keywords - 2SC5831 pdf specs
2SC5831 cross reference
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