2SC5831 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5831
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-126ML
2SC5831 Transistor Equivalent Substitute - Cross-Reference Search
2SC5831 Datasheet (PDF)
2sc5831.pdf
Ordering number : ENN72612SC5831NPN Epitaxial Planar Silicon Transistor2SC5831Driver ApplicationsPreliminaryApplications Package Dimensions Suitable for use in switching of inductive load unit : mm (motor drivers, printer hammer drivers, relay drivers). 2042B[2SC5831]8.04.0Features3.31.0 1.0 High DC current gain. Wide ASO. On-chip zener diode of 65
2sc5839.pdf
Transistors2SC5839Silicon NPN epitaxial planar typeFor low-voltage high-frequency amplification Unit: mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip-1ment for Ultraminiature leadless package0.39+0.011.000.05 -0.030.6 mm 1.0 mm (height 0.39 mm)0.250.05 0.250.051 Absolute Maximum Ratings
2sc5838.pdf
Transistors2SC5838Silicon NPN epitaxial planar typeFor UHF band low-noise amplification Unit: mm Features3 2 Suitable for high-density mounting and downsizing of the equip-ment for Ultraminiature leadless package10.6 mm 1.0 mm (height 0.39 mm)0.39+0.011.000.05 -0.030.250.05 0.250.051 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit
2sc5586 2sc5830 2sc5924.pdf
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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC1059
