2SC5838 Datasheet and Replacement
Type Designator: 2SC5838
SMD Transistor Code: 1F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: ML3-N2
2SC5838 Datasheet (PDF)
2sc5838.pdf

Transistors2SC5838Silicon NPN epitaxial planar typeFor UHF band low-noise amplification Unit: mm Features3 2 Suitable for high-density mounting and downsizing of the equip-ment for Ultraminiature leadless package10.6 mm 1.0 mm (height 0.39 mm)0.39+0.011.000.05 -0.030.250.05 0.250.051 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit
2sc5831.pdf

Ordering number : ENN72612SC5831NPN Epitaxial Planar Silicon Transistor2SC5831Driver ApplicationsPreliminaryApplications Package Dimensions Suitable for use in switching of inductive load unit : mm (motor drivers, printer hammer drivers, relay drivers). 2042B[2SC5831]8.04.0Features3.31.0 1.0 High DC current gain. Wide ASO. On-chip zener diode of 65
2sc5839.pdf

Transistors2SC5839Silicon NPN epitaxial planar typeFor low-voltage high-frequency amplification Unit: mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip-1ment for Ultraminiature leadless package0.39+0.011.000.05 -0.030.6 mm 1.0 mm (height 0.39 mm)0.250.05 0.250.051 Absolute Maximum Ratings
2sc5586 2sc5830 2sc5924.pdf

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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