2SC5882 Datasheet and Replacement
Type Designator: 2SC5882
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.08
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 4500
MHz
Collector Capacitance (Cc): 1
pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
-
BJT ⓘ Cross-Reference Search
2SC5882 Datasheet (PDF)
..1. Size:115K isahaya
2sc5882.pdf 

2SC5882NPN 2SC5882NPN
8.1. Size:144K toshiba
2sc5886a.pdf 

2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit: mmDC/DC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitColl
8.2. Size:123K toshiba
2sc5886.pdf 

2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation: V = 0.22 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollect
8.3. Size:76K sanyo
2sa2099 2sc5888.pdf 

Ordering number : EN7331A2SA2099 / 2SC5888SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.S
8.4. Size:42K sanyo
2sc5888.pdf 

Ordering number : ENN73312SA2099 / 2SC5888PNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers.unit : mm2041AFeatures[2SA2099 / 2SC5888] Adoption of MBIT processes.4.510.02.8 Large current capacitance.3.2 Low collector-to-emitter
8.5. Size:37K sanyo
2sa2098 2sa2098 2sc5887.pdf 

Ordering number : ENN74952SA2098 / 2SC5887PNP / NPN Epitaxial Planar Silicon Transistors2SA2098 / 2SC5887High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2098 / 2SC5887]4.5 Adoption of MBIT processes. 10.02.8 Large current capacitance.3.2 Low collector-to-emitter satu
8.6. Size:87K rohm
2sc5880.pdf 

2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. ATV(tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically :(Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter(2) CollectorTaping specifications
8.7. Size:64K panasonic
2sc5885.pdf 

Power Transistors2SC5885Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm9.90.3 4.60.22.90.2 Features High breakdown voltage: VCBO 1 500 V 3.20.1 Wide safe operation area Built-in dumper diode0.760.061.250.11.450.152.60.11.20.15 Absolute Maximum Ratings TC = 25C0.70.10.750.1
8.8. Size:75K panasonic
2sc5884.pdf 

Power Transistors2SC5884Silicon NPN triple diffusion mesa typeHorizontal deflection output for TVUnit: mm9.90.3 4.60.22.90.2 Features High breakdown voltage: VCBO 1 500 V 3.20.1 Wide safe operation area Built-in dumper diode0.760.061.250.11.450.152.60.11.20.15 Absolute Maximum Ratings TC = 25C0.70.10.750.1Paramet
8.9. Size:131K utc
2sc5889.pdf 

UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1*High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO-92SP1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL
8.10. Size:209K inchange semiconductor
2sc5886a.pdf 

isc Silicon NPN Power Transistor 2SC5886ADESCRIPTIONHigh switching speed timeLow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh-Speed Switching ApplicationsDC/DC Converter ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
8.11. Size:181K inchange semiconductor
2sc5885.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5885DESCRIPTIONHigh Breakdown VoltageWide Area of Safe OperationBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for TV, CRT monitorapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
8.12. Size:173K inchange semiconductor
2sc5887.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5887DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Speed SwitchingLow Saturation VoltageComplement to Type 2SA2098100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, lamp drivers, motor drivers.
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, 8050
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
History: FJV3102R
| 2SD667
| BCW47A
| 3NU72
| DRC5A24E
| BUY11
| 40326S
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