All Transistors. 2SA1720 Datasheet

 

2SA1720 Datasheet and Replacement


   Type Designator: 2SA1720
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: TO-220
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2SA1720 Datasheet (PDF)

 ..1. Size:113K  nec
2sa1720.pdf pdf_icon

2SA1720

DATA SHEETDARLINGTON POWER TRANSISTOR2SA1720PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATIONThis transistor is ideal for high-precision control such as PWMPart No. Packagecontrol for pulse motors or brushless motors in OA and FA equipment.2SA1720 Isolated TO-220FEATUR

 8.1. Size:245K  toshiba
2sa1721.pdf pdf_icon

2SA1720

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: V = -0.5 V (max) CE (sat) Small collector output capacitance: C = 5.5 pF (typ.) o

 8.2. Size:230K  toshiba
2sa1721r 2sa1721o.pdf pdf_icon

2SA1720

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mmPlasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: VCE (sat) = -0.5 V (max) Small collector output capacitance: Cob = 5.5 pF (typ.)

 8.3. Size:97K  sanyo
2sa1729.pdf pdf_icon

2SA1720

Ordering number:EN3133PNP Epitaxial Planar Silicon Transistor2SA1729High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SA1729] Fast switching speed. Small-sized package.E : EmitterC : CollectorB : BaseSANYO : PCP(Bottom vie

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | KTA1267 | 2N4033 | 2SA373 | 2N718A | 2SA1380D

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