2SA1723 Datasheet. Specs and Replacement

Type Designator: 2SA1723  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1500 MHz

Collector Capacitance (Cc): 5.8 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO-126

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2SA1723 datasheet

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2SA1723

Ordering number EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions Wideband amplifiers. unit mm High-frequency drivers. 2009B [2SA1723] Features High fT (fT=1.5GHz typ). High current (IC=300mA). Adoption of FBET process. 1 Emitter 2 Collector 3 Base JEDE... See More ⇒

 8.1. Size:245K  toshiba

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2SA1723

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = -300 V, VCEO = -300 V Low saturation voltage V = -0.5 V (max) CE (sat) Small collector output capacitance C = 5.5 pF (typ.) o... See More ⇒

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2SA1723

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2SA1723

Ordering number EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SA1729] Fast switching speed. Small-sized package. E Emitter C Collector B Base SANYO PCP (Bottom vie... See More ⇒

Detailed specifications: 2SC6114, 2SC634SP, 2SA0879, 2SA1530A, 2SA1580, 2SA1585S, 2SA1714, 2SA1720, 2N2222A, 2SA1749, 2SA1753, 2SA1759, 2SA1762, 2SA1765, 2SA1766, 2SA1769, 2SA1772

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