All Transistors. 2SA1723 Datasheet

 

2SA1723 Datasheet and Replacement


   Type Designator: 2SA1723
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1500 MHz
   Collector Capacitance (Cc): 5.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-126
 

 2SA1723 Substitution

   - BJT ⓘ Cross-Reference Search

   

2SA1723 Datasheet (PDF)

 ..1. Size:80K  sanyo
2sa1723.pdf pdf_icon

2SA1723

Ordering number:EN4668PNP Epitaxial Planar Silicon Transistors2SA1723High-Frequency Amplifier, Medium-PowerAmplifier ApplicationsApplications Package Dimensions Wideband amplifiers.unit:mm High-frequency drivers.2009B[2SA1723]Features High fT (fT=1.5GHz typ). High current (IC=300mA). Adoption of FBET process.1 : Emitter2 : Collector3 : BaseJEDE

 8.1. Size:245K  toshiba
2sa1721.pdf pdf_icon

2SA1723

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: V = -0.5 V (max) CE (sat) Small collector output capacitance: C = 5.5 pF (typ.) o

 8.2. Size:230K  toshiba
2sa1721r 2sa1721o.pdf pdf_icon

2SA1723

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mmPlasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: VCE (sat) = -0.5 V (max) Small collector output capacitance: Cob = 5.5 pF (typ.)

 8.3. Size:97K  sanyo
2sa1729.pdf pdf_icon

2SA1723

Ordering number:EN3133PNP Epitaxial Planar Silicon Transistor2SA1729High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SA1729] Fast switching speed. Small-sized package.E : EmitterC : CollectorB : BaseSANYO : PCP(Bottom vie

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 40517 | 2SD1632 | 2SB405 | 2SA2112-AN | BD168 | 2N1749 | BUV28A

Keywords - 2SA1723 transistor datasheet

 2SA1723 cross reference
 2SA1723 equivalent finder
 2SA1723 lookup
 2SA1723 substitution
 2SA1723 replacement

 

 
Back to Top

 


 
.