2SD2164 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2164
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 110 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 800
Noise Figure, dB: -
Package: TO-220
2SD2164 Transistor Equivalent Substitute - Cross-Reference Search
2SD2164 Datasheet (PDF)
2sd2164.pdf
DATA SHEETSILICON POWER TRANSISTOR2SD2164NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm)for high hFE. This transistor is ideal for simplifying drive circuits andreducing power dissipation because its hFE is as high as that ofDarlington transistors, b
2sd2163.pdf
DATA SHEETDARLINGTON POWER TRANSISTOR2SD2163NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS ANDLOW-SPEED HIGH-CURRENT SWITCHINGThe 2SD2163 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)speed high-current switching. This transistor is ideal for directdriving from the IC output of devices such as pulse motor driv
2sd2161.pdf
DATA SHEETSILICON POWER TRANSISTOR2SD2161NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2161 is a Darlington power transistor that can directly drive ORDERING INFORMATIONfrom the IC output. This transistor is ideal for motor drivers andOrdering Name Packagesolenoid drivers in such as OA and FA equipment.
2sd2165.pdf
DATA SHEETSILICON POWER TRANSISTOR2SD2165NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive circuits and 4.5 0.210.0 0.3reducing power dissipation because its hFE is as high as that of
2sd2162.pdf
DATA SHEETSILICON POWER TRANSISTOR2SD2162NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2162 is a Darlington power transistor that can directly drive ORDERING INFORMATIONfrom the IC output. This transistor is ideal for motor drivers andOrdering Name Packagesolenoid drivers in such as OA and FA equipment.
2sd2167.pdf
2SD2167TransistorsPower Transistor (314V, 2A)2SD2167 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.4.02) Zener diode has low voltage dispersion.1.0 2.5 0.53) Strong protection against reverse power surges due(1) to low loads.(2)4) PC=2 W (on 40400.7mm ceramic board) (3)(1) Base(Gate)(2) Collector(Drain)(3) Emitt
2sd2098 2sd2166.pdf
TransistorsLow VCE(sat) Transistor(Strobe flash)2SD2098 / 2SD2118 / 2SD2097 / 2SD2166FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC / IB = 4A / 0.1A)2) Excellent DC current gain charac-teristics.3) Complements the2SB1386 / 2SB1412 / 2SB1326 /2SB1436.FStructureEpitaxial planar typeNPN silicon transistor(96-229-D204)252Trans
2sd2166.pdf
2SD2166(BR3DA2166QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features ,, 2SB1436(BR3CA1436QF) Low VCE(sat), excellent DC current gain, complements the 2SB1436(BR3CA1436QF). / Applications
2sd2167.pdf
SMD Type TransistorsNPN Transistors2SD2167SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=27V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 27 Collector - Emitter Voltage VCEO 27 V Emitter - Base Voltage VEBO
2sd2163.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2163DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 10AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe ideal for direct driving from the IC output of devicessuch as pulse motor
2sd2161.pdf
isc Silicon NPN Darlington Power Transistor 2SD2161DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 2A, I = 2mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigne
2sd2165.pdf
isc Silicon NPN Darlington Power Transistor 2SD2165DESCRIPTIONHigh DC Current Gain-: h = 800(MIN)@ (V = 5V, I = 1A)FE CE CLow Collector-Emitter Saturation Voltage: V =1V(MIN)@ (I = 3V, I = 30mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use low frequency amplifilier and lowswitching speed a
2sd2162.pdf
isc Silicon NPN Darlington Power Transistor 2SD2162DESCRIPTIONHigh hFE due to Darlington connection: H 2,000 @(V = 2.0 V, I = 3.0 A)FE CE CLow Collector Saturation Voltage-: V 1.5V @ (I =3A, I = 3mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-spe
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
LIST
Last Update
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS