2SD2218 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2218
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO-220ML
2SD2218 Transistor Equivalent Substitute - Cross-Reference Search
2SD2218 Datasheet (PDF)
2sd2218.pdf
Ordering number:EN3363PNP/NPN Epitaxial Planar Silicon Transistors2SB1467/2SD2218General High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2041AFeatures [2SB1467/2SD2218] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max.
2sd2219.pdf
Ordering number:EN3364PNP/NPN Epitaxial Planar Silicon Transistors2SB1468/2SD221930V/8A High-Speed Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, etc. unit:mm2041AFeatures [2SB1468/2SD2219] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) ma
2sd2217.pdf
DATA SHEETDARLINGTON POWER TRANSISTOR2SD2217NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2217 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)frequency power amplifiers and low-speed switching. Thistransistor is ideal for direct driving from the IC out to drivers such aspulse moto
2sd2212 2sd2143 2sd1866.pdf
2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)
2sd2211 2sd1918 2sd1857a.pdf
2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)
2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf
2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277
2sd2211.pdf
2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)
2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)
2sd2215.pdf
Power Transistors2SD2215, 2SD2215ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For power amplification3.0 0.2Features High collector to base voltage VCBO1.1 0.1 0.85 0.1 I type package enabling direct soldering of the radiating fin to0.75 0.1 0.4 0.1the printed circuit board, etc. of small electronic equipment.2.3 0.2Absolute Maximum
2sd2216 e.pdf
Transistor2SD2216Silicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB14621.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Rati
2sd2216j e.pdf
Transistor2SD2216JSilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1462J1.60 0.050.80 0.80 0.050.425 0.425FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.+0.050.850
2sd2216.pdf
Transistor2SD2216Silicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB14621.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Rati
2sd2210.pdf
Transistor2SD2210Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).45Low ON resistance Ron.High foward current transfer ratio hFE.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0
2sd2210 e.pdf
Transistor2SD2210Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).45Low ON resistance Ron.High foward current transfer ratio hFE.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0
2sd2213.pdf
2SD2213Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter15 k 0.5 2. Collector (Typ) (Typ)13. Base3212SD2213Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 8VCollector current
2sd2210.pdf
SMD Type TransistorsNPN Transistors2SD2210SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE
2sd2211.pdf
SMD Type TransistorsNPN Transistors2SD2211SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage
2sd2212.pdf
SMD Type TransistorsNPN Transistors2SD2212SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50VC0.42 0.10.46 0.1BR1 R21.BaseE2.CollectorR1 3.5kR2 300 3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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