All Transistors. 2SD2258 Datasheet

 

2SD2258 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD2258
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: MT2

 2SD2258 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD2258 Datasheet (PDF)

 ..1. Size:51K  panasonic
2sd2258.pdf

2SD2258 2SD2258

Transistor2SD2258 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.5 0.5 2.5 0.51 2 3Absolute Maximum Ratings (Ta=25C)Note: In a

 ..2. Size:56K  panasonic
2sd2258 e.pdf

2SD2258 2SD2258

Transistor2SD2258 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.5 0.5 2.5 0.51 2 3Absolute Maximum Ratings (Ta=25C)Note: In a

 8.1. Size:135K  toshiba
2sd2257.pdf

2SD2258 2SD2258

2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Complementary to 2SB1495 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 1

 8.2. Size:95K  sanyo
2sd2251.pdf

2SD2258 2SD2258

Ordering number:EN3741ANPN Triple Diffused Planar Silicon Transistor2SD2251Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2251] On-chip damper diode.16.05.63.43.12.82.0 2.01.00.61 : Base1

 8.3. Size:88K  sanyo
2sd2252.pdf

2SD2258 2SD2258

Ordering number:EN3320NPN Triple Diffused Planar Silicon Transistor2SD2252Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD2252]16.05.6Features3.43.1 High-speed : tf=100ns. High breakdown voltage : VCBO=1500V. High r

 8.4. Size:57K  panasonic
2sd2250.pdf

2SD2258 2SD2258

Power Transistors2SD2250Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149020.0 0.5 5.0 0.33.0FeaturesOptimum for 80W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

 8.5. Size:38K  panasonic
2sd2259.pdf

2SD2258 2SD2258

Transistor2SD2259Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3

 8.6. Size:57K  panasonic
2sb1492 2sd2254 2sd2254.pdf

2SD2258 2SD2258

Power Transistors2SD2254Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149220.0 0.5 5.0 0.33.0FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

 8.7. Size:55K  panasonic
2sd2255.pdf

2SD2258 2SD2258

Power Transistors2SD2255Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB149315.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

 8.8. Size:43K  panasonic
2sd2259 e.pdf

2SD2258 2SD2258

Transistor2SD2259Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3

 8.9. Size:36K  hitachi
2sd2256.pdf

2SD2258 2SD2258

2SD2256Silicon NPN Triple DiffusedADE-208-928 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifier complementary pair with 2SB1494Features High breakdown voltage and high current (VCEO = 120 V, IC = 25 A) Built-in C-E diodeOutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter13232SD2256Absolute Maximum Ratings (Ta = 25C)Item

 8.10. Size:99K  wingshing
2sd2253.pdf

2SD2258

2SD2253Silicon NPN Triple Diffused Power TransistorGENERAL DESCRIPTION HORIZONAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TVHigh Speed Switching ApplicationsTO-3PMQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-Base voltageVCB0 - - 1700 VCollector-emitter voltage (open base)VCEO - 600 VCollector current (DC)IC - 6 ACollector curren

 8.11. Size:205K  inchange semiconductor
2sd2250.pdf

2SD2258 2SD2258

isc Silicon NPN Darlington Power Transistor 2SD2250DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1490Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

 8.12. Size:200K  inchange semiconductor
2sd2251.pdf

2SD2258 2SD2258

isc Silicon NPN Power Transistor 2SD2251DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.13. Size:75K  inchange semiconductor
2sd2256.pdf

2SD2258 2SD2258

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT

 8.14. Size:195K  inchange semiconductor
2sd2257.pdf

2SD2258 2SD2258

isc Silicon NPN Darlington Power Transistor 2SD2257DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEComplement to Type 2SB1495Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsHammer drive, p

 8.15. Size:198K  inchange semiconductor
2sd2253.pdf

2SD2258 2SD2258

isc Silicon NPN Power Transistor 2SD2253DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top