2SD2263 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2263
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92
2SD2263 Transistor Equivalent Substitute - Cross-Reference Search
2SD2263 Datasheet (PDF)
2sd2263.pdf
2SD2263Silicon NPN EpitaxialApplicationLow frequency power amplifierFeatures Build in zener diode for surge absorb. Suitable for relay drive with small power loss.OutlineTO-92 (1)2ID31. Emitter2. Collector3. Base13212SD2263Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter volt
2sd2261.pdf
Ordering number:ENN5311ANPN Epitaxial Planar Silicon Transistor2SD2261Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit:mm2038AFeatures [2SD2261]4.5 Darlington connection.1.51.6 High DC current gain. DC current gain is less affected by temperature. Small-sized package.0.4 0.53 2 10.41.
2sd2260 e.pdf
Transistor2SD2260Silicon NPN triple diffusion planer typeFor high breakdown voltage general amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh collector breakdown voltage.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings
2sd2266.pdf
Power Transistors2SD2266Silicon NPN triple diffusion planar typeFor power switchingUnit: mm5.0 0.1Features 10.0 0.2 1.0High-speed switching90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0.10.35 0.1 1.05 0.1Parameter Symbol Ratings Unit
2sd2261.pdf
SMD Type TransistorsNPN Transistors2SD2261SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2.5A Collector Emitter Voltage VCEO=60VC0.42 0.10.46 0.1B1.Base2.Collector7k 5003.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emit
2sd226.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD226DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BF277
