2SD2276 PDF and Equivalents Search

 ..1. Size:57K  panasonic

 2sd2276.pdf

Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1503 20.0 0.5 5.0 0.3 3.0 Features Optimum for 110W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒

 ..2. Size:205K  inchange semiconductor

 2sd2276.pdf

isc Silicon NPN Darlington Power Transistor 2SD2276 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 7A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1503 Minimum Lot-to-Lot variations for robust device performance and reliable op... See More ⇒

 8.1. Size:219K  toshiba

 2sd2271.pdf

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 8.2. Size:56K  panasonic

 2sd2273.pdf

Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1500 20.0 0.5 5.0 0.3 3.0 Features Optimum for 40W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒

 8.3. Size:57K  panasonic

 2sd2275.pdf

Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1502 20.0 0.5 5.0 0.3 3.0 Features Optimum for 55W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒

 8.4. Size:195K  inchange semiconductor

 2sd2271.pdf

isc Silicon NPN Darlington Power Transistor 2SD2271 DESCRIPTION High DC Current Gain- h = 500(Min)@ (V = 2V, I = 5A) FE CE C High Breakdown Voltage V (sus)=200V Min CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drive applications High current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

 8.5. Size:204K  inchange semiconductor

 2sd2275.pdf

isc Silicon NPN Darlington Power Transistor 2SD2275 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 4A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 4A, I = 4mA) CE(sat) C B Complement to Type 2SB1502 Minimum Lot-to-Lot variations for robust device performance and reliable op... See More ⇒