2SD2324 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2324
SMD Transistor Code: BN
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: CP
2SD2324 Transistor Equivalent Substitute - Cross-Reference Search
2SD2324 Datasheet (PDF)
2sd2324.pdf
Ordering number:EN4664NPN Epitaxial Planar Silicon Transistor2SD2324Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains a diode between colletor and emitter.2018B Contains a bias resistor between base and emitter.[2SD2324] Large current capacity.0.4 Small-sized package facilitating the realization of 0.16
2sd2324.pdf
SMD Type TransistorsNPN Transistors2SD2324SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=800mA1 2 Collector Emitter Voltage VCEO=15V+0.050.95+0.1-0.1 0.1 -0.01-0.1C 1.9+0.11.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20
2sd2321 e.pdf
Transistor2SD2321Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 40 V1.2
2sd2321.pdf
Transistor2SD2321Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 40 V1.2
2sd2328.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2328DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 3.0V(Max)@ I = 10A, I = 1ACE(sat) C BHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
