2SD2479 Datasheet and Replacement
Type Designator: 2SD2479
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: MT-3-A1
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2SD2479 Datasheet (PDF)
2sd2479.pdf

Power Transistors2SD2479Silicon NPN epitaxial planar typeUnit: mmFor low-frequency amplification7.50.2 4.50.2 Features High forward current transfer ratio hFE0.650.1 0.850.1 Allowing supply with the radial taping 0.8 C 0.8 C1.00.10.70.10.70.11.150.2 Absolute Maximum Ratings Ta = 25C1.150.2Parameter Symbol Rating Unit0.50.1 0.4
2sd2474 e.pdf

Transistor2SD2474Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB16121.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.040.
2sd2470.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS FEATURES * Low saturation voltage V= 0.25V(typ) at IC/IB= 3A/0.1A 1* Collector current of 5A is possible TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD2470L-x-T9S-B 2SD2470G-x-T9S-B TO-92SP E C B Tape Box2SD2
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: FMMT723 | 2N3322 | 8050QLT1 | RT5N231C | 2SC2946 | PBSS5560PA | 2N5679
Keywords - 2SD2479 transistor datasheet
2SD2479 cross reference
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History: FMMT723 | 2N3322 | 8050QLT1 | RT5N231C | 2SC2946 | PBSS5560PA | 2N5679



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