2SD2528 Datasheet and Replacement

Power Transistors2SD2528Silicon NPN epitaxial planar typeFor power amplification with high forward current transfer ratioUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw1.4 0.22.6 0.1Ab

2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A) CE (sat) C Complementary to 2SB1641 Maximum Ratings (Ta = 25C)

2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm High DC current gain: 100 (min) Low saturation voltage: V = 0.4 V (typ.) (I = 2 A, I = 0.2 A) CE (sat) C B Complementary to 2SB1640 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-em

Power Transistors2SD2527Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw1.4 0.22.6

isc Silicon NPN Power Transistor 2SD2524DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER