2SD2581 Datasheet and Replacement

Ordering number:5818NPN Triple Diffused Planar Silicon Transistor2SD2581Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2581] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.61 2 31:Base2:Collector

isc Silicon NPN Power Transistor 2SD2581DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

2SD2584 TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A) CE (sat) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-

2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL

Ordering number:5796NPN Triple Diffused Planar Silicon Transistor2SD2580Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2580] Adoption of MBIT process.16.05.63.4 On-chip damper diode.3.12.82.0 2.01.00.6

DATA SHEETSILICON TRANSISTOR2SD2582AUDIO FREQUENCY AMPLIFIER, SWITCHINGNPN SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS Low VCE(sat)in millimeters (inches)VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) High DC Current Gain8.5 MAX. 2.8 MAX.(0.334 MAX.) (0.110 MAX.)hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A) 3.2 0.2 ( 0.126)ABSOLUTE MAXIMUM RATI

DATA SHEETSILICON TRANSISTOR2SD2583AUDIO FREQUENCY AMPLIFIER, SWITCHINGNOPN SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS Low VCE(sat)in millimeters (inches)VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain8.5 MAX. 2.8 MAX.(0.334 MAX.) (0.110 MAX.)hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) 3.2 0.2 ( 0.126)ABSOLUTE MAXIMUM RAT

Darlington 2SD2589Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) External Dimensions FM-25(TO220)(Ta=25C) Electrical CharacteristicsSymbol 2SD2589 Unit Symbol Conditions 2SD2589 Unit0.24.80.210.2VCBO 110 V ICBO VCB=110V 100max A0.12.0IEBO

2SD2583(BR3DA2583QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features Low saturation voltage, high DC current gain. / Applications Audio frequency amplifier and switching applica

isc Silicon NPN Power Transistor 2SD2580DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD2583DESCRIPTIONHigh Collector Current-I = 5ACLow Saturation Voltage -: V = 0.15V(Max)@ I =1A, I = 50mACE(sat) C BHigh DC Current Gain-: h = 150~600@ I = 1AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and switchingapplications.ABSO

isc Silicon NPN Darlington Power Transistor 2SD2589DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 5mA)CE(sat) C BComplement to Type 2SB1649Minimum Lot-to-Lot variations for robust deviceperformance and reliable o

isc Silicon NPN Power Transistor 2SD2586DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE