2SD2589 Datasheet, Equivalent, Cross Reference Search

2SD2589 Transistor Equivalent Substitute - Cross-Reference Search

2SD2589 Datasheet (PDF)

1.1. 2sd2589.pdf Size:22K _sanken-ele

Darlington 2SD2589 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25�C) External Dimensions FM-25(TO220) (Ta=25�C) Electrical Characteristics Symbol 2SD2589 Unit Symbol Conditions 2SD2589 Unit �0.2 4.8 �0.2 10.2 VCBO 110 V ICBO VCB=110V 100max � A �0.1 2.0 IEBO VCEO 110

4.1. 2sd2584.pdf Size:218K _toshiba

2SD2584 TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (V = 3 V, I = 3 A) CE C • Low saturation voltage: V = 1.5 V (max) (I = 3 A) CE (sat) C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-

4.2. 2sd2586.pdf Size:275K _toshiba

2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 µs (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

 4.3. 2sd2581.pdf Size:43K _sanyo

Ordering number:5818 NPN Triple Diffused Planar Silicon Transistor 2SD2581 Color TV Horizontal Deflection Output Applications Features Package Dimensions � High speed. unit:mm � High breakdown voltage (VCBO=1500V). 2039D � High reliability (Adoption of HVP process). [2SD2581] � Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1:Base 2:Collector 3:Emi

4.4. 2sd2580.pdf Size:43K _sanyo

Ordering number:5796 NPN Triple Diffused Planar Silicon Transistor 2SD2580 Color TV Horizontal Deflection Output Applications Features Package Dimensions � High speed. unit:mm � High breakdown voltage (VCBO=1500V). 2039D � High reliability (Adoption of HVP process). [2SD2580] � Adoption of MBIT process. 16.0 5.6 3.4 � On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3

 4.5. 2sd2582.pdf Size:46K _nec

DATA SHEET SILICON TRANSISTOR 2SD2582 AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS � Low VCE(sat) in millimeters (inches) VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) � High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A) ? 3.2 � 0.2 (? 0.126) ABSOLUTE MAXIMUM RATINGS Maxim

4.6. 2sd2583.pdf Size:47K _nec

DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS � Low VCE(sat) in millimeters (inches) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) � High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) ? 3.2 � 0.2 (? 0.126) ABSOLUTE MAXIMUM RATINGS Maxi

4.7. 2sd2581.pdf Size:178K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter V

4.8. 2sd2583.pdf Size:52K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION ·High Collector Current-IC= 5A ·Low Saturation Voltage : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS ·Designed for audio frequency amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP

4.9. 2sd2580.pdf Size:151K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2580 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High speed Ў¤ High breakdown voltage Ў¤ High reliability Ў¤ Built-in damper diode APPLICATIONS Color TV horizontal deflection output Ў¤ PINNING PIN 1 2 3 Base Collector DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO I

4.10. 2sd2586.pdf Size:162K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2586 DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage ,high speed Ў¤ Low saturation voltage Ў¤ Bult-in damper type APPLICATIONS Ў¤ Horizontal deflection output for color TV PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximu

4.11. 2sd2583.pdf Size:461K _blue-rocket-elect

2SD2583(BR3DA2583QF) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package. 特征 / Features 饱和压降低；直流电增益高。 Low saturation voltage, high DC current gain. 用途 / Applications 用于音频放大及开关电路。 Audio frequency amplifier and switching applica

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