2SD2627 Specs and Replacement

Type Designator: 2SD2627

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO-220FI

 2SD2627 Substitution

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2SD2627 datasheet

 ..1. Size:28K  sanyo

2sd2627.pdf pdf_icon

2SD2627

Ordering number ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079C High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0... See More ⇒

 0.1. Size:30K  sanyo

2sd2627ls.pdf pdf_icon

2SD2627

Ordering number ENN6478A 2SD2627LS NPN Triple Diffused Planar Silicon Transistor 2SD2627LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9 1.... See More ⇒

 8.1. Size:29K  sanyo

2sd2624.pdf pdf_icon

2SD2627

Ordering number ENN6500A 2SD2624 NPN Triple Diffused Planar Silicon Transistor 2SD2624 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2624] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.... See More ⇒

 8.2. Size:40K  sanyo

2sd2629.pdf pdf_icon

2SD2627

Ordering number ENN6352 NPN Triple Diffused Planar Silicon Transistor 2SD2629 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079C High reliability (Adoption of HVP process). [2SD2629] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0.7 0.75 ... See More ⇒

Detailed specifications: 2SD2582, 2SD2589, 2SD2598, 2SD2607, 2SD2611, 2SD2620J, 2SD2621, 2SD2623, D882, 2SD2635, 2SD2638, 2SD2639, 2SD2645, 2SD2646, 2SD2648, 2SD2649, 2SD2650

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