All Transistors. NESG2101M05 Datasheet

 

NESG2101M05 Datasheet, Equivalent, Cross Reference Search


   Type Designator: NESG2101M05
   SMD Transistor Code: T1J
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 13 V
   Maximum Collector-Emitter Voltage |Vce|: 5 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 14000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 130
   Noise Figure, dB: -
   Package: M05

 NESG2101M05 Transistor Equivalent Substitute - Cross-Reference Search

   

NESG2101M05 Datasheet (PDF)

 ..1. Size:575K  nec
nesg2101m05.pdf

NESG2101M05
NESG2101M05

NEC's NPN SiGe NESG2101M05HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: M05 SOT-343 footprint, with a height of only 0.59 mm Flat

 5.1. Size:234K  nec
nesg2101m16.pdf

NESG2101M05
NESG2101M05

NPN SILICON GERMANIUM RF TRANSISTORNESG2101M16NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz

 7.1. Size:53K  nec
nesg210719.pdf

NESG2101M05
NESG2101M05

DATA SHEETNPN SILICON GERMANIUM RF TRANSISTORNESG210719NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES The device is an ideal choice for OSC, low noise, high-gain amplification High breakdown voltage technology for SiGe Tr. 3-pin ultra super minimold package (19, 1608 PKG) ORDERING INFORMATION Par

 7.2. Size:302K  nec
nesg2107m33.pdf

NESG2101M05
NESG2101M05

PRELIMINARY DATA SHEETNEC's NPN SILICON TRANSISTOR NESG2107M33FEATURES IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGEORDERING INFORMATIONPART NUMBER QUANTITY SUPPLYING FORMNESG2107M33-A 50 pcs (Non reel) 8 mm wide embossed tapingNESG2107M33-T3-A 10 kpcs

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top