NESG2031M16 Datasheet, Equivalent, Cross Reference Search
Type Designator: NESG2031M16
SMD Transistor Code: zF
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20000 MHz
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: MINIMOLD M16
NESG2031M16 Transistor Equivalent Substitute - Cross-Reference Search
NESG2031M16 Datasheet (PDF)
nesg2031m16.pdf
NPN SILICON GERMANIUM RF TRANSISTORNESG2031M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
nesg2031m05.pdf
NPN SiGe RF TRANSISTORNESG2031M05NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead st
nesg2030m04.pdf
NPN SiGe RF TRANSISTORNESG2030M04NPN SiGe HIGH FREQUENCY TRANSISTORFEATURES SiGe TECHNOLOGY:fT = 60 GHz Process LOW NOISE FIGURE:NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN:MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE:SOT-343 footprint, with a height of only 0.59 mmFlat lead style for better RF performanceM04DESCRIPTIONNEC's NESG2030M04 is fabric
nesg204619.pdf
PRELIMINARY DATA SHEETNEC's NPN SiGe TRANSISTORNESG204619FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V 3-PIN SUPER MINIMOLD (19) PACKAGEORD
nesg2021m16.pdf
NPN SILICON GERMANIUM RF TRANSISTORNESG2021M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f
nesg2046m33.pdf
PRELIMINARY DATA SHEETNEC's NPN SiGe TRANSISTORNESG2046M33FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V 3-PIN SUPER LEAD-LESS MINIMOLD (
nesg2021m05.pdf
DATA SHEETNEC's NPN SiGe NESG2021M05HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: M05 SOT-343 footprint, with a height of only 0.59 mm Flat lead style for b
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
