NESG2021M16 Datasheet and Replacement

NPN SILICON GERMANIUM RF TRANSISTORNESG2021M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f

DATA SHEETNEC's NPN SiGe NESG2021M05HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: M05 SOT-343 footprint, with a height of only 0.59 mm Flat lead style for b

PRELIMINARY DATA SHEETNEC's NPN SiGe TRANSISTORNESG204619FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V 3-PIN SUPER MINIMOLD (19) PACKAGEORD

PRELIMINARY DATA SHEETNEC's NPN SiGe TRANSISTORNESG2046M33FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V 3-PIN SUPER LEAD-LESS MINIMOLD (

NPN SiGe RF TRANSISTORNESG2031M05NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead st

NPN SILICON GERMANIUM RF TRANSISTORNESG2031M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz

NPN SiGe RF TRANSISTORNESG2030M04NPN SiGe HIGH FREQUENCY TRANSISTORFEATURES SiGe TECHNOLOGY:fT = 60 GHz Process LOW NOISE FIGURE:NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN:MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE:SOT-343 footprint, with a height of only 0.59 mmFlat lead style for better RF performanceM04DESCRIPTIONNEC's NESG2030M04 is fabric