2N7053 Datasheet and Replacement

Discrete POWER & SignalTechnologies2N7052 2N7053 NZT7053CECC TO-92BBTO-226CESOT-223BENPN Darlington TransistorThis device is designed for applications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage.Sourced from Process 06.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO C

2N7051NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings

isc N-Channel MOSFET Transistor 2N7054FEATURESDrain Current I =43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor 2N7055FEATURESDrain Current: I = 33A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh efficiency switch mode power suppliesActive power factor corre

isc N-Channel MOSFET Transistor 2N7058FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose