2N7370 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N7370
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-254
2N7370 Transistor Equivalent Substitute - Cross-Reference Search
2N7370 Datasheet (PDF)
2n7370.pdf
TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/624 Devices Qualified Level JAN 2N7370 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 100 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Base Current I 0.2 Adc B Collector Current 12 Adc IC Total Power Di
2n7371.pdf
TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/623 Devices Qualified Level JAN, JANTX 2N7371 JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 100 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Base Current I 0.2 Adc B Collector Current 12 Adc IC Total Power
2n7372 2n7373.pdf
7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-03052N7372 - PNPFAX: (561) 845-78132N7373 - NPNAPPLICATIONS:APPLICATIONS: Power Supply Inverters and Converters General Purpose AmplifiersComplimentaryFEATURES:FEATURES: Planar Process for Reliability Power Transistors Fast Switchingin Hermetic Isolated High-Frequency P
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
