2N6309 Datasheet and Replacement

   Type Designator: 2N6309
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 400 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 90 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 1000 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO59

2N6309 Substitution

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2N6309 Datasheet (PDF)

9.1. Size:62K central
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.2. Size:177K mospec
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9.3. Size:278K no
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The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall MIL-PRF-19500/498E be completed by 12 August 20005. 12 May 2005 SUPERSEDING MIL-PRF-19500/498D 30 April 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6306, 2N6306T1, 2N6306T3, 2N6308, 2N6308T1, 2N6308T3, JAN, J

9.4. Size:25K semelab
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2N6299SMD 2N6299SMD052N6301SMD 2N6301SMD05MECHANICAL DATADimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR2N6301SMD - NPN TRANSISTOR Designed for general

9.5. Size:11K semelab
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2N6302Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 16A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.6. Size:25K semelab
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2N6299SMD 2N6299SMD052N6301SMD 2N6301SMD05MECHANICAL DATADimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR2N6301SMD - NPN TRANSISTOR Designed for general

9.7. Size:54K microsemi
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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level JAN 2N6306 2N6308 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6306 2N6308 Units Collector-Emitter Voltage 250 350 Vdc VCEO Collector-Base Voltage 500 700 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Collector Current 8.0 Adc IC Base Current 4.0 Adc IB Total P

9.8. Size:56K microsemi
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7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N6303APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency AmplifiersFEATURES:Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)Transistors DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc Low Collector-

9.9. Size:86K microsemi
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140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-98552N6304RF & MICROWAVE DISCRETELOW POWER TRANSISTORSFeatures Silicon RF NPN, TO-72, UHF general purpose Low NoiseTransistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc21. Emitter2. Base1 3 Maximum Available Gain = 14 dB (min) @ f

9.10. Size:184K aeroflex
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NPN Darlington Power Silicon Transistor2N6300 & 2N6301Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 TO-66 (TO-213AA) PackageMaximum RatingsRatings Symbol 2N6300 2N6301 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 60 80 VdcEmitter - Base Voltage VEBO 5.0 VdcBase Current IB 120 mAdcCollector Current IC 8.0 AdcTot

9.11. Size:128K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6307 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplif

9.12. Size:128K inchange semiconductor
2n6308.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6308 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplif

9.13. Size:131K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6298/6299 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T

9.14. Size:130K inchange semiconductor
2n6302.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6302 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain @IC=8A APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching regulator circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified

9.15. Size:128K inchange semiconductor
2n6306.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6306 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplif

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .