2N6310 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N6310 Specs and Replacement

Type Designator: 2N6310

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 400 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 90 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 1000 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO59

2N6310 Substitution

- BJT ⓘ Cross-Reference Search

2N6310 datasheet

9.1. Size:165K mospec

2n6315-18.pdf pdf_icon

A A A A ... See More ⇒

9.2. Size:196K bocasemi

2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf pdf_icon

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com ... See More ⇒

9.3. Size:131K inchange semiconductor

2n6312 2n6313 2n6314.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION With TO-66 package Low collector saturation voltage Low leakage current APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector A... See More ⇒

9.4. Size:131K inchange semiconductor

2n6315 2n6316.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6315 2N6316 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6317/6318 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collect... See More ⇒