FJN3311R Specs and Replacement

Type Designator: FJN3311R

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-92

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FJN3311R datasheet

 ..1. Size:26K  fairchild semi

 fjn3311r.pdf pdf_icon

FJN3311R

FJN3311R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K ) Complement to FJN4311R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B... See More ⇒

 8.1. Size:32K  fairchild semi

 fjn3310r.pdf pdf_icon

FJN3311R

FJN3310R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to FJN4310R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-... See More ⇒

 8.2. Size:27K  fairchild semi

 fjn3313r.pdf pdf_icon

FJN3311R

FJN3313R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K , R2=47K ) Complement to FJN4313R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC... See More ⇒

 8.3. Size:36K  fairchild semi

 fjn3315r.pdf pdf_icon

FJN3311R

FJN3315R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K , R2=10K ) TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltage 5... See More ⇒

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Detailed specifications: FJN3303R, FJN3304R, FJN3305R, FJN3306R, FJN3307R, FJN3308R, FJN3309R, FJN3310R, 2N5401, FJN3312R, FJN3313R, FJN3314R, FJN3315R, FJN4301R, FJN4302R, FJN4303R, FJN4304R

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