All Transistors. FJN4301R Datasheet

 

FJN4301R Datasheet, Equivalent, Cross Reference Search

Type Designator: FJN4301R

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO-92

FJN4301R Transistor Equivalent Substitute - Cross-Reference Search

 

FJN4301R Datasheet (PDF)

1.1. fjn4301r.pdf Size:68K _fairchild_semi

FJN4301R
FJN4301R

FJN4301R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K?, R2=4.7K?) Complement to FJN3301R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector

4.1. fjn4307r.pdf Size:37K _fairchild_semi

FJN4301R
FJN4301R

FJN4307R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K?, R2=47K?) Complement to FJN3307R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

4.2. fjn4306r.pdf Size:70K _fairchild_semi

FJN4301R
FJN4301R

FJN4306R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K?, R2=47K?) Complement to FJN3306R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

4.3. fjn4308r.pdf Size:36K _fairchild_semi

FJN4301R
FJN4301R

FJN4308R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K?, R2=22K?) Complement to FJN3308R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

4.4. fjn4305r.pdf Size:69K _fairchild_semi

FJN4301R
FJN4301R

FJN4305R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K?, R2=10K?) Complement to FJN3305R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-

4.5. fjn4303r.pdf Size:36K _fairchild_semi

FJN4301R
FJN4301R

FJN4303R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K?, R2=22K?) Complement to FJN3303R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

4.6. fjn4302r.pdf Size:36K _fairchild_semi

FJN4301R
FJN4301R

FJN4302R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K?, R2=10K?) Complement to FJN3302R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

4.7. fjn4304r.pdf Size:65K _fairchild_semi

FJN4301R
FJN4301R

FJN4304R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K?, R2=47K?) Complement to FJN3304R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

4.8. fjn4309r.pdf Size:32K _fairchild_semi

FJN4301R
FJN4301R

FJN4309R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K?) Complement to FJN3309R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltag

Datasheet: FJN3308R , FJN3309R , FJN3310R , FJN3311R , FJN3312R , FJN3313R , FJN3314R , FJN3315R , S9014 , FJN4302R , FJN4303R , FJN4304R , FJN4305R , FJN4306R , FJN4307R , FJN4308R , FJN4309R .

 


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