All Transistors. FJN4306R Datasheet

 

FJN4306R Datasheet, Equivalent, Cross Reference Search


   Type Designator: FJN4306R
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: TO-92

 FJN4306R Transistor Equivalent Substitute - Cross-Reference Search

   

FJN4306R Datasheet (PDF)

 ..1. Size:70K  fairchild semi
fjn4306r.pdf

FJN4306R
FJN4306R

FJN4306RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJN3306RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.1. Size:36K  fairchild semi
fjn4302r.pdf

FJN4306R
FJN4306R

FJN4302RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJN3302RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.2. Size:69K  fairchild semi
fjn4305r.pdf

FJN4306R
FJN4306R

FJN4305RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJN3305RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCV

 8.3. Size:36K  fairchild semi
fjn4303r.pdf

FJN4306R
FJN4306R

FJN4303RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJN3303RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.4. Size:65K  fairchild semi
fjn4304r.pdf

FJN4306R
FJN4306R

FJN4304RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJN3304RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.5. Size:36K  fairchild semi
fjn4308r.pdf

FJN4306R
FJN4306R

FJN4308RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJN3308RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.6. Size:37K  fairchild semi
fjn4307r.pdf

FJN4306R
FJN4306R

FJN4307RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJN3307RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.7. Size:32K  fairchild semi
fjn4309r.pdf

FJN4306R
FJN4306R

FJN4309RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJN3309RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVCBO Collector

 8.8. Size:68K  fairchild semi
fjn4301r.pdf

FJN4306R
FJN4306R

FJN4301RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJN3301RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FJNS4212R | 2N984 | 2N525

 

 
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