FJN5471 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJN5471
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 700
Noise Figure, dB: -
Package: TO-92
FJN5471 Transistor Equivalent Substitute - Cross-Reference Search
FJN5471 Datasheet (PDF)
..1. Size:94K fairchild semi
fjn5471.pdf
fjn5471.pdf
FJN5471For Output Amplifier of Electronic Flash Unit High DC Currrent Gain Low Collector-Emitter Saturation Voltage High Performance at Low Supply VoltageTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
