All Transistors. FJNS3214R Datasheet

 

FJNS3214R Datasheet and Replacement


   Type Designator: FJNS3214R
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: TO-92S
 

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FJNS3214R Datasheet (PDF)

 ..1. Size:28K  fairchild semi
 fjns3214r.pdf pdf_icon

FJNS3214R

FJNS3214RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJNS4214RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC

 7.1. Size:26K  fairchild semi
 fjns3212r.pdf pdf_icon

FJNS3214R

FJNS3212RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJNS4212RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitCSymbol Parameter Value UnitsVCBO Collecto

 7.2. Size:27K  fairchild semi
 fjns3213r.pdf pdf_icon

FJNS3214R

FJNS3213RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K, R2=47K) Complement to FJNS4213RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC

 7.3. Size:32K  fairchild semi
 fjns3210r.pdf pdf_icon

FJNS3214R

FJNS3210RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJNS4210RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value Units CVCBO Collector

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Datasheet: FJNS3205R , FJNS3206R , FJNS3207R , FJNS3208R , FJNS3210R , FJNS3211R , FJNS3212R , FJNS3213R , B772 , FJNS3215R , FJNS4201R , FJNS4202R , FJNS4203R , FJNS4204R , FJNS4205R , FJNS4206R , FJNS4207R .

History: BC849CLT1G | BC858ALT1 | 2SC3088 | DTC013ZM | CMC1535A | 2SC599N | FJNS3211R

Keywords - FJNS3214R transistor datasheet

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