2N6314 Datasheet and Replacement
Type Designator: 2N6314
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 800 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO66
2N6314 Substitution
2N6314 Datasheet (PDF)
2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf

ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n6312 2n6313 2n6314.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION With TO-66 package Low collector saturation voltage Low leakage current APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorA
2n6315 2n6316.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6315 2N6316 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6317/6318 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 Collect
Datasheet: 2N6308 , 2N6308M , 2N6309 , 2N631 , 2N6310 , 2N6311 , 2N6312 , 2N6313 , BD136 , 2N6315 , 2N6317 , 2N6318 , 2N6319 , 2N632 , 2N6320 , 2N6321 , 2N6322 .
Keywords - 2N6314 transistor datasheet
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