All Transistors. FJNS4210R Datasheet

 

FJNS4210R Datasheet and Replacement


   Type Designator: FJNS4210R
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-92S
 

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FJNS4210R Datasheet (PDF)

 ..1. Size:32K  fairchild semi
 fjns4210r.pdf pdf_icon

FJNS4210R

FJNS4210RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJNS3210RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value Units CVCBO Collector

 7.1. Size:27K  fairchild semi
 fjns4214r.pdf pdf_icon

FJNS4210R

FJNS4214RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJNS3214RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC

 7.2. Size:27K  fairchild semi
 fjns4213r.pdf pdf_icon

FJNS4210R

FJNS4213RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJNS3213RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC

 7.3. Size:26K  fairchild semi
 fjns4211r.pdf pdf_icon

FJNS4210R

FJNS4211RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJNS3211RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value Units CVCBO Collector

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Datasheet: FJNS4201R , FJNS4202R , FJNS4203R , FJNS4204R , FJNS4205R , FJNS4206R , FJNS4207R , FJNS4208R , BC558 , FJNS4211R , FJNS4212R , FJNS4213R , FJNS4214R , FJP5321 , FJP5355 , FJP9100 , FJPF5321 .

History: UN6217S | 2SC1999 | TRF648 | CM10-12 | DTC143XEB | BF720T1G | LBC847BDW1T1G

Keywords - FJNS4210R transistor datasheet

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