FJP5355 Datasheet and Replacement

FJP5355High Voltage Switch Mode Application High Speed Switching Very Low Switching Losses Very Low Operating Temperature Wide RBSOATO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 440 V VEBO Emitte

FJP5321High Voltage and High Reliability High speed Switching Wide Safe Operating AreaTO-22011.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 800 VVCEO Collector-Emitter Voltage 500 VVEBO Emitter-Base Voltage 7 VIC Collector Curr

July 2008FJP5304DNPN Silicon TransistorHigh Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage TimeEquivalent CircuitCBTO-2201E1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC=25C unless

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur