All Transistors. FJV3101R Datasheet

 

FJV3101R Datasheet and Replacement


   Type Designator: FJV3101R
   SMD Transistor Code: R21
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SOT-23
 

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FJV3101R Datasheet (PDF)

 ..1. Size:55K  fairchild semi
 fjv3101r.pdf pdf_icon

FJV3101R

FJV3101RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJV4101R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R21BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no

 8.1. Size:55K  fairchild semi
 fjv3108r.pdf pdf_icon

FJV3101R

FJV3108RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K, R2=22K) Complement to FJV4108R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R28BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.2. Size:84K  fairchild semi
 fjv3104r.pdf pdf_icon

FJV3101R

FJV3104RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit,3 Built in bias Resistor (R1=47K, R2=47K) Complement to FJV4104R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R24BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.3. Size:56K  fairchild semi
 fjv3102r.pdf pdf_icon

FJV3101R

FJV3102RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=10K) Complement to FJV4102R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R22BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

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Datasheet: FJNS4214R , FJP5321 , FJP5355 , FJP9100 , FJPF5321 , FJPF9020 , FJT44 , FJV1845 , 8550 , FJV3102R , FJV3103R , FJV3104R , FJV3105R , FJV3106R , FJV3107R , FJV3108R , FJV3109R .

History: 2N5666 | ET6002 | L2SA1774RT1G | KSA1013R | 2N540A | BC850BW-AU | 2N4257A

Keywords - FJV3101R transistor datasheet

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