FJV4101R Specs and Replacement
Type Designator: FJV4101R
SMD Transistor Code: R71
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: SOT-23
FJV4101R Substitution
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FJV4101R datasheet
FJV4101R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=4.7K , R2=4.7K ) Complement to FJV3101R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R71 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise no... See More ⇒
FJV4109R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K ) Complement to FJV3109R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R79 R B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parame... See More ⇒
FJV4107R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K , R2=47K ) Complement to FJV3107R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R77 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise note... See More ⇒
FJV4103R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K , R2=22K ) Complement to FJV3103R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R73 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted... See More ⇒
Detailed specifications: FJV3108R, FJV3109R, FJV3110R, FJV3111R, FJV3112R, FJV3113R, FJV3114R, FJV3115R, BC639, FJV4102R, FJV4103R, FJV4104R, FJV4105R, FJV4106R, FJV4107R, FJV4108R, FJV4109R
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