All Transistors. FJV4103R Datasheet

 

FJV4103R Datasheet, Equivalent, Cross Reference Search


   Type Designator: FJV4103R
   SMD Transistor Code: R73
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT-23

 FJV4103R Transistor Equivalent Substitute - Cross-Reference Search

   

FJV4103R Datasheet (PDF)

 ..1. Size:56K  fairchild semi
fjv4103r.pdf

FJV4103R
FJV4103R

FJV4103RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K, R2=22K) Complement to FJV3103R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR73R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.1. Size:52K  fairchild semi
fjv4109r.pdf

FJV4103R
FJV4103R

FJV4109RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to FJV3109R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR79RBPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame

 8.2. Size:56K  fairchild semi
fjv4107r.pdf

FJV4103R
FJV4103R

FJV4107RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to FJV3107R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R77BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.3. Size:89K  fairchild semi
fjv4106r.pdf

FJV4103R
FJV4103R

FJV4106RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=47K) Complement to FJV3106R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R76BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.4. Size:55K  fairchild semi
fjv4108r.pdf

FJV4103R
FJV4103R

FJV4108RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=47K, R2=22K) Complement to FJV3108R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR78R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.5. Size:55K  fairchild semi
fjv4102r.pdf

FJV4103R
FJV4103R

FJV4102RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K, R2=10K) Complement to FJV3102R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR72R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.6. Size:88K  fairchild semi
fjv4105r.pdf

FJV4103R
FJV4103R

FJV4105RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJV3105R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R75BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise not

 8.7. Size:89K  fairchild semi
fjv4104r.pdf

FJV4103R
FJV4103R

FJV4104RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=47K, R2=47K) Complement to FJV3104R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR74R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.8. Size:55K  fairchild semi
fjv4101r.pdf

FJV4103R
FJV4103R

FJV4101RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJV3101R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR71R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDC01C | 2SB358H | 2SB419 | BD825-16 | BDT60AF | 2SA276 | 2SD1273Q

 

 
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