All Transistors. FJV4111R Datasheet

 

FJV4111R Datasheet and Replacement


   Type Designator: FJV4111R
   SMD Transistor Code: R81
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
 

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FJV4111R Datasheet (PDF)

 ..1. Size:45K  fairchild semi
fjv4111r.pdf pdf_icon

FJV4111R

FJV4111RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=22K) Complement to FJV3111R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR81 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

 8.1. Size:45K  fairchild semi
fjv4112r.pdf pdf_icon

FJV4111R

FJV4112RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=47K) Complement to FJV3112R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR82 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

 8.2. Size:46K  fairchild semi
fjv4113r.pdf pdf_icon

FJV4111R

FJV4113RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJV3113R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR83R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.3. Size:52K  fairchild semi
fjv4110r.pdf pdf_icon

FJV4111R

FJV4110RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=10K) Complement to FJV3110R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR80 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

Datasheet: FJV4103R , FJV4104R , FJV4105R , FJV4106R , FJV4107R , FJV4108R , FJV4109R , FJV4110R , 2SC1740 , FJV4112R , FJV4113R , FJV4114R , FJV42MTF , FJV992 , FJX1182 , FJX2222A , FJX2907A .

History: 2SA432A | 3DD175 | D64DS6

Keywords - FJV4111R transistor datasheet

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