All Transistors. FJV4112R Datasheet

 

FJV4112R Datasheet, Equivalent, Cross Reference Search

Type Designator: FJV4112R

SMD Transistor Code: R82

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-23

FJV4112R Transistor Equivalent Substitute - Cross-Reference Search

 

FJV4112R Datasheet (PDF)

1.1. fjv4112r.pdf Size:45K _fairchild_semi

FJV4112R
FJV4112R

FJV4112R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=47K?) Complement to FJV3112R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R82 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Unit

4.1. fjv4114r.pdf Size:46K _fairchild_semi

FJV4112R
FJV4112R

FJV4114R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =4.7K?, R2=47K?) Complement to FJV3114R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R84 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Pa

4.2. fjv4111r.pdf Size:45K _fairchild_semi

FJV4112R
FJV4112R

FJV4111R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K?) Complement to FJV3111R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R81 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Unit

 4.3. fjv4110r.pdf Size:52K _fairchild_semi

FJV4112R
FJV4112R

FJV4110R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=10K?) Complement to FJV3110R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R80 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Unit

4.4. fjv4113r.pdf Size:46K _fairchild_semi

FJV4112R
FJV4112R

FJV4113R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K?, R2=47K?) Complement to FJV3113R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R83 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Par

Datasheet: FJV4104R , FJV4105R , FJV4106R , FJV4107R , FJV4108R , FJV4109R , FJV4110R , FJV4111R , 2N2905 , FJV4113R , FJV4114R , FJV42MTF , FJV992 , FJX1182 , FJX2222A , FJX2907A , FJX3001R .

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