All Transistors. FJY3009R Datasheet

 

FJY3009R Datasheet and Replacement


   Type Designator: FJY3009R
   SMD Transistor Code: S09
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-523F
 

 FJY3009R Substitution

   - BJT ⓘ Cross-Reference Search

   

FJY3009R Datasheet (PDF)

 ..1. Size:245K  fairchild semi
 fjy3009r.pdf pdf_icon

FJY3009R

July 2007FJY3009RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJY4009REquivalent CircuitC CS09 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collect

 8.1. Size:252K  fairchild semi
 fjy3002r.pdf pdf_icon

FJY3009R

July 2007FJY3002RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJY4002REquivalent CircuitC CS02 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VV

 8.2. Size:250K  fairchild semi
 fjy3001r.pdf pdf_icon

FJY3009R

July 2007FJY3001RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJY4001REquivalent CircuitC CS01 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V

 8.3. Size:248K  fairchild semi
 fjy3004r.pdf pdf_icon

FJY3009R

July 2007FJY3004RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJY4004REquivalent CircuitC CS04 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VV

SHOW MORE

Datasheet: FJY3001R , FJY3002R , FJY3003R , FJY3004R , FJY3005R , FJY3006R , FJY3007R , FJY3008R , 2SA1837 , FJY3010R , FJY3011R , FJY3012R , FJY3013R , FJY3014R , FJY3015R , FJY4001R , FJY4002R .

History: 3DG110 | D42CU12 | 2SC2815

Keywords - FJY3009R transistor datasheet

 FJY3009R cross reference
 FJY3009R equivalent finder
 FJY3009R lookup
 FJY3009R substitution
 FJY3009R replacement

 

 
Back to Top

 


 
.