FJY4003R Datasheet, Equivalent, Cross Reference Search
Type Designator: FJY4003R
SMD Transistor Code: S53
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 5.5
pF
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: SOT-523F
FJY4003R Transistor Equivalent Substitute - Cross-Reference Search
FJY4003R Datasheet (PDF)
fjy4004r.pdf
July 2007FJY4004RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJY3004REquivalent CircuitC CS54 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
fjy4001r.pdf
July 2007FJY4001RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJY3001REquivalent CircuitC CS51 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
fjy4005r.pdf
July 2007FJY4005RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJY3005REquivalent CircuitC CS55 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
fjy4009r.pdf
July 2007FJY4009RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJY3009REquivalent CircuitC CS59 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collec
fjy4007r.pdf
July 2007FJY4007RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJY3007REquivalent CircuitC CS57 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
fjy4002r.pdf
July 2007FJY4002RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJY3002REquivalent CircuitC CS52 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
fjy4008r.pdf
July 2007FJY4008RPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJY3008REquivalent CircuitC CS58 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO
fjy4006r.pdf
July 2007FJY4006RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJY3006REquivalent CircuitC CS56 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC3694
