FJY4005R
Datasheet, Equivalent, Cross Reference Search
Type Designator: FJY4005R
SMD Transistor Code: S55
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 5.5
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT-523F
FJY4005R
Transistor Equivalent Substitute - Cross-Reference Search
FJY4005R
Datasheet (PDF)
..1. Size:250K fairchild semi
fjy4005r.pdf
July 2007FJY4005RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJY3005REquivalent CircuitC CS55 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
8.1. Size:249K fairchild semi
fjy4004r.pdf
July 2007FJY4004RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJY3004REquivalent CircuitC CS54 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
8.2. Size:251K fairchild semi
fjy4001r.pdf
July 2007FJY4001RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJY3001REquivalent CircuitC CS51 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
8.3. Size:242K fairchild semi
fjy4009r.pdf
July 2007FJY4009RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJY3009REquivalent CircuitC CS59 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collec
8.4. Size:251K fairchild semi
fjy4007r.pdf
July 2007FJY4007RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJY3007REquivalent CircuitC CS57 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
8.5. Size:250K fairchild semi
fjy4002r.pdf
July 2007FJY4002RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJY3002REquivalent CircuitC CS52 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
8.6. Size:241K fairchild semi
fjy4008r.pdf
July 2007FJY4008RPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJY3008REquivalent CircuitC CS58 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO
8.7. Size:251K fairchild semi
fjy4006r.pdf
July 2007FJY4006RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJY3006REquivalent CircuitC CS56 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
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