All Transistors. FJY4005R Datasheet

 

FJY4005R Datasheet and Replacement


   Type Designator: FJY4005R
   SMD Transistor Code: S55
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-523F
 

 FJY4005R Substitution

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FJY4005R Datasheet (PDF)

 ..1. Size:250K  fairchild semi
 fjy4005r.pdf pdf_icon

FJY4005R

July 2007FJY4005RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJY3005REquivalent CircuitC CS55 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

 8.1. Size:249K  fairchild semi
 fjy4004r.pdf pdf_icon

FJY4005R

July 2007FJY4004RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJY3004REquivalent CircuitC CS54 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

 8.2. Size:251K  fairchild semi
 fjy4001r.pdf pdf_icon

FJY4005R

July 2007FJY4001RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJY3001REquivalent CircuitC CS51 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

 8.3. Size:242K  fairchild semi
 fjy4009r.pdf pdf_icon

FJY4005R

July 2007FJY4009RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJY3009REquivalent CircuitC CS59 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collec

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Datasheet: FJY3012R , FJY3013R , FJY3014R , FJY3015R , FJY4001R , FJY4002R , FJY4003R , FJY4004R , 2SD2499 , FJY4006R , FJY4007R , FJY4008R , FJY4009R , FJY4010R , FJY4011R , FJY4012R , FJY4013R .

History: BF224 | ME501 | MPSU03 | 40321V2 | 2SC197 | 2SC5355 | KT351A

Keywords - FJY4005R transistor datasheet

 FJY4005R cross reference
 FJY4005R equivalent finder
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