All Transistors. FJY4012R Datasheet

 

FJY4012R Datasheet and Replacement


   Type Designator: FJY4012R
   SMD Transistor Code: S62
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-523F
 

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FJY4012R Datasheet (PDF)

 ..1. Size:243K  fairchild semi
 fjy4012r.pdf pdf_icon

FJY4012R

July 2007FJY4012RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJY3012REquivalent CircuitC CS62 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collect

 8.1. Size:245K  fairchild semi
 fjy4010r.pdf pdf_icon

FJY4012R

July 2007FJY4010RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJY3010REquivalent CircuitC CS60 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collect

 8.2. Size:251K  fairchild semi
 fjy4013r.pdf pdf_icon

FJY4012R

July 2007FJY4013RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJY3013REquivalent CircuitC CS63 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

 8.3. Size:251K  fairchild semi
 fjy4014r.pdf pdf_icon

FJY4012R

July 2007FJY4014RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=47K) Complement to FJY3014REquivalent CircuitC CS64 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

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Datasheet: FJY4004R , FJY4005R , FJY4006R , FJY4007R , FJY4008R , FJY4009R , FJY4010R , FJY4011R , C3198 , FJY4013R , FJY4014R , FJYF2906 , FMB100 , FMB200 , FMB5551 , FMB857B , FMBA06 .

Keywords - FJY4012R transistor datasheet

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