FMB100 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMB100
SMD Transistor Code: NA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SSOT-6
FMB100 Transistor Equivalent Substitute - Cross-Reference Search
FMB100 Datasheet (PDF)
fmb100.pdf
FMB100C2E1C1B2E2B1pin #1SuperSOT-6Mark: .NADot denotes pin #1NPN Multi-Chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collectorcurrents to 300 mA. Sourced from Process 10.Absolute Maximum Ratings* TA =25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: MPSW3725