FMB100 Specs and Replacement
Type Designator: FMB100
SMD Transistor Code: NA
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SSOT-6
FMB100 Substitution
- BJT ⓘ Cross-Reference Search
FMB100 datasheet
FMB100 C2 E1 C1 B2 E2 B1 pin #1 SuperSOT -6 Mark .NA Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* TA =25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-... See More ⇒
Detailed specifications: FJY4008R, FJY4009R, FJY4010R, FJY4011R, FJY4012R, FJY4013R, FJY4014R, FJYF2906, A1013, FMB200, FMB5551, FMB857B, FMBA06, FMBA14, FMBA56, FMBM5401, FMBM5551
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