FPN630 Datasheet and Replacement
Type Designator: FPN630
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-226
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FPN630 Datasheet (PDF)
fpn630.pdf

FPN630FPN630ATO-226CBEPNP Low Saturation TransistorThese devices are designed for high current gain and lowsaturation voltage with collector currents up to 3.0 A continuous.Sourced from Process PC.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 35 VVEBO Emitter-Base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC3489 | BSV16-10 | RT2P01M | DTA114TMFHA | CTP1732 | CP502 | 2SA188
Keywords - FPN630 transistor datasheet
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History: 2SC3489 | BSV16-10 | RT2P01M | DTA114TMFHA | CTP1732 | CP502 | 2SA188



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