FZT3019 Datasheet, Equivalent, Cross Reference Search
Type Designator: FZT3019
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-223
FZT3019 Transistor Equivalent Substitute - Cross-Reference Search
FZT3019 Datasheet (PDF)
..1. Size:180K fairchild semi
fzt3019.pdf
fzt3019.pdf
April 2006FZT3019tmNPN General Purpose Amplifier4Features This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V.3 Sourced from process 12. 21SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value U
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
