FZT3019 Specs and Replacement

Type Designator: FZT3019

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-223

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FZT3019 datasheet

 ..1. Size:180K  fairchild semi

fzt3019.pdf pdf_icon

FZT3019

April 2006 FZT3019 tm NPN General Purpose Amplifier 4 Features This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. 3 Sourced from process 12. 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value U... See More ⇒

Detailed specifications: FSB619, FSB649, FSB660, FSB660A, FSB6726, FSB749, FSBCW30, FTM3725, BDT88, KSA1015, KSA1203, KSA1281, KSA1625, KSB1116S, KSB798, KSC1815, KSC2001

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